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20 April 2024
 
  » arxiv » 2005.8938

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Fractional quantum Hall effect in CVD-grown graphene
M. Schmitz ; T. Ouaj ; Z. Winter ; K. Rubi ; K. Watanabe ; T. Taniguchi ; U. Zeitler ; B. Beschoten ; C. Stampfer ;
Date 18 May 2020
AbstractWe show the emergence of fractional quantum Hall states in dry-transferred chemical vapor deposition (CVD) derived graphene assembled into heterostructures for magnetic fields from below 3 T to 35 T. Effective composite-fermion filling factors up to $ u^* = 4$ are visible and higher order composite-fermion states (with four flux quanta attached) start to emerge at the highest fields. Our results show that the quantum mobility of CVD-grown graphene is comparable to that of exfoliated graphene and, more specifically, that the $p/3$ fractional quantum Hall states have energy gaps of up to 30 K, well comparable to those observed in other silicon-gated devices based on exfoliated graphene.
Source arXiv, 2005.8938
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