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20 April 2024 |
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Article overview
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Fractional quantum Hall effect in CVD-grown graphene | M. Schmitz
; T. Ouaj
; Z. Winter
; K. Rubi
; K. Watanabe
; T. Taniguchi
; U. Zeitler
; B. Beschoten
; C. Stampfer
; | Date: |
18 May 2020 | Abstract: | We show the emergence of fractional quantum Hall states in dry-transferred
chemical vapor deposition (CVD) derived graphene assembled into
heterostructures for magnetic fields from below 3 T to 35 T. Effective
composite-fermion filling factors up to $
u^* = 4$ are visible and higher
order composite-fermion states (with four flux quanta attached) start to emerge
at the highest fields. Our results show that the quantum mobility of CVD-grown
graphene is comparable to that of exfoliated graphene and, more specifically,
that the $p/3$ fractional quantum Hall states have energy gaps of up to 30 K,
well comparable to those observed in other silicon-gated devices based on
exfoliated graphene. | Source: | arXiv, 2005.8938 | Services: | Forum | Review | PDF | Favorites |
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