|
| | | | |
| | | |
| Stat |
Members: 3645
Articles: 2'501'711
Articles rated: 2609
20 April 2024 |
|
| | | | |
|
Article overview
| |
|
|
Tunneling Anisotropic Magnetoresistance: A spin-valve like tunnel magnetoresistance using a single magnetic layer | | C. Gould
; C. Rüster
; T. Jungwirth
; E. Girgis
; G. M. Schott
; R. Giraud
; K. Brunner
; G. Schmidt
; L.W. Molenkamp
; | | Date: |
28 Jul 2004 | | Subject: | Mesoscopic Systems and Quantum Hall Effect | cond-mat.mes-hall | | Affiliation: | 2,3,4), E. Girgis , G. M. Schott , R. Giraud , K. Brunner , G. Schmidt , and L.W. Molenkamp ( Universität Würzburg, Germany, Institut of Physics of Czech Republic, University of Nottingham, UK, University of Texas | | Abstract: | We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled ferromagnets. The effect is observed in a normal-metal/insulator/ferromagnetic-semiconductor tunneling device. This behavior is caused by the interplay of the anisotropic density of states in (Ga,Mn)As with respect to the magnetization direction, and the two-step magnetization reversal process in this material. | | Source: | arXiv, cond-mat/0407735 | | Services: | Forum | Review | PDF | Favorites | |
|
|
No review found.
Did you like this article?
Note: answers to reviews or questions about the article must be posted in the forum section.
Authors are not allowed to review their own article. They can use the forum section.
browser Mozilla/5.0 AppleWebKit/537.36 (KHTML, like Gecko; compatible; ClaudeBot/1.0; +claudebot@anthropic.com)
|
| |
|
|
|
|
News, job offers and information for researchers and scientists:
| |
REGISTER