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Spin-dependent resonant tunneling in symmetrical double-barrier structure | M.M. Glazov
; P.S. Alekseev
; M.A. Odnoblyudov
; V.M. Chistyakov
; S.A. Tarasenko
; I.N. Yassievich
; | Date: |
8 Oct 2004 | Journal: | Phys. Rev. B 71, 155313 (2005) | Subject: | Mesoscopic Systems and Quantum Hall Effect; Materials Science | cond-mat.mes-hall cond-mat.mtrl-sci | Abstract: | A theory of resonant spin-dependent tunneling has been developed for symmetrical double-barrier structures grown of non-centrosymmetrical semiconductors. The dependence of the tunneling transparency on the spin orientation and the wave vector of electrons leads to (i) spin polarization of the transmitted carriers in an in-plane electric field, (ii) generation of an in-plane electric current under tunneling of spin-polarized carriers. These effects originated from spin-orbit coupling-induced splitting of the resonant level have been considered for double-barrier tunneling structures. | Source: | arXiv, cond-mat/0410198 | Services: | Forum | Review | PDF | Favorites |
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