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29 March 2024
 
  » arxiv » cond-mat/0410198

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Spin-dependent resonant tunneling in symmetrical double-barrier structure
M.M. Glazov ; P.S. Alekseev ; M.A. Odnoblyudov ; V.M. Chistyakov ; S.A. Tarasenko ; I.N. Yassievich ;
Date 8 Oct 2004
Journal Phys. Rev. B 71, 155313 (2005)
Subject Mesoscopic Systems and Quantum Hall Effect; Materials Science | cond-mat.mes-hall cond-mat.mtrl-sci
AbstractA theory of resonant spin-dependent tunneling has been developed for symmetrical double-barrier structures grown of non-centrosymmetrical semiconductors. The dependence of the tunneling transparency on the spin orientation and the wave vector of electrons leads to (i) spin polarization of the transmitted carriers in an in-plane electric field, (ii) generation of an in-plane electric current under tunneling of spin-polarized carriers. These effects originated from spin-orbit coupling-induced splitting of the resonant level have been considered for double-barrier tunneling structures.
Source arXiv, cond-mat/0410198
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