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19 April 2024
 
  » arxiv » 2008.02446

 Article overview


Paramagnetic spin Hall magnetoresistance
Koichi Oyanagi ; Juan M. Gomez-Perez ; Xian-Peng Zhang ; Takashi Kikkawa ; Yao Chen ; Edurne Sagasta ; Luis E. Hueso ; Vitaly N. Golovach ; F. Sebastian Bergeret ; Fèlix Casanova ; Eiji Saitoh ;
Date 6 Aug 2020
AbstractSpin Hall magnetoresistance (SMR) refers to a resistance change in a metallic film reflecting the magnetization direction of a magnet attached to the film. The mechanism of this phenomenon is spin exchange between conduction-electron spins and magnetization at the interface. SMR has been used to read out information written in a small magnet and to detect magnetization dynamics, but it has been limited to magnets; magnetic ordered phases or instability of magnetic phase transition has been believed to be indispensable. Here, we report the observation of SMR in a paramagnetic insulator Gd$_{3}$Ga$_{5}$O$_{12}$ (GGG) without spontaneous magnetization combined with a Pt film. The paramagnetic SMR can be attributed to spin-transfer torque acting on localized spins in GGG. We determine the efficiencies of spin torque and spin-flip scattering at the Pt/GGG interface, and demonstrate these quantities can be tuned with external magnetic fields. The results clarify the mechanism of spin-transport at a metal/paramagnetic insulator interface, which gives new insight into the spintronic manipulation of spin states in paramagnetic systems.
Source arXiv, 2008.02446
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