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25 April 2024 |
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Room-temperature electric field effect and carrier-type inversion in graphene films | | K.S. Novoselov
; A.K. Geim
; S.V. Morozov
; S.V. Dubonos
; Y. Zhang
; D. Jiang
; | | Date: |
25 Oct 2004 | | Subject: | Mesoscopic Systems and Quantum Hall Effect; Materials Science | cond-mat.mes-hall cond-mat.mtrl-sci | | Abstract: | The ability to control electronic properties of a material by externally applied voltage is at the heart of modern electronics. In many cases, it is the so-called electric field effect that allows one to vary the carrier concentration in a semiconductor device and, consequently, change an electric current through it. As the semiconductor industry is nearing the limits of performance improvements for the current technologies dominated by silicon, there is a constant search for new, non-traditional materials whose properties can be controlled by electric field. Most notable examples of such materials developed recently are organic conductors [1], oxides near a superconducting or magnetic phase transition [2] and carbon nanotubes [3-5]. Here, we describe another system of this kind - thin monocrystalline films of graphite - which exhibits a pronounced electric field effect, such that carriers in the conductive channel can be turned into either electrons or holes. The films remain metallic, continuous and of high quality down to a few atomic layers in thickness. The demonstrated ease of preparing such films of nearly macroscopic sizes and of their processing by standard microfabrication techniques, combined with submicron-scale ballistic transport even at room temperature, offer a new two-dimensional system controllable by electric-field doping and provide a realistic promise of device applications. | | Source: | arXiv, cond-mat/0410631 | | Services: | Forum | Review | PDF | Favorites | |
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