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29 March 2024
 
  » arxiv » 2009.00342

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Molecular beam epitaxy of the half-Heusler antiferromagnet CuMnSb
Lukas Scheffler ; Katarzyna Gas ; Sanjib Banik ; Martin Kamp ; Jonas Knobel ; Haicheng Lin ; Claus Schumacher ; Charles Gould ; Maciej Sawicki ; Johannes Kleinlein ; Laurens W. Molenkamp ;
Date 1 Sep 2020
AbstractWe report growth of CuMnSb thin films by molecular beam epitaxy on InAs(001) substrates. The CuMnSb layers are compressively strained ($0.6~ ext{%}$) due to lattice mismatch. The thin films have a $omega$ full width half max of $7.7^{’’}$ according to high resolution X-ray diffraction, and a root mean square roughness of $0.14~ ext{nm}$ as determined by atomic force microscopy. Magnetic and electrical properties are found to be consistent with reported values from bulk samples. We find a N’eel temperature of $62~ ext{K}$, a Curie-Weiss temperature of $-65~ ext{K}$ and an effective moment of $5.9~mu_{ ext{B}}/ ext{f.u.}$. Transport measurements confirm the antiferromagetic transition and show a residual resistivity at $4~ ext{K}$ of $35~muOmegacdot ext{cm}$.
Source arXiv, 2009.00342
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