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Switchable topological domains in point contacts based on transition metal tellurides | | Yu. G. Naidyuk
; D. L. Bashlakov
; O.E. Kvitnitskaya
; B. R. Piening
; G. Shipunov
; D. V. Efremov
; S. Aswartham
; B. Büchner
; | | Date: |
3 Nov 2020 | | Abstract: | Resistive switching in voltage biased point contacts (PCs) based on series of
transition metals tellurides (TMTs) such as MeTe2 (Me=Mo, W) and TaMeTe4 (Me=
Ru, Rh, Ir) has been observed. The switching occurs between a low resistive
metallic-type state and a high resistive semiconducting-type state by applying
certain bias voltage (below 1V), while reverse switching takes place by
applying voltage of opposite polarity. The switching effect consists in
changing the PC resistance up to two orders of magnitude, which increases with
decreasing temperature. The origin of the effect can be formation of domain in
PC core by applying a bias voltage, when a strong electric field (about
10kV/cm) modifies crystal structure and/or control its polarization. Besides,
impact of domain wall with topological interfacial states is also considered.
Thus, we demonstrate the new functionality of studied TMTs arizing from
switchable domains in submicron hetero-structures, that is promising, e. g.,
for non volatile RRAM engineering.
. | | Source: | arXiv, 2011.01569 | | Services: | Forum | Review | PDF | Favorites | |
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