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Charge carriers trapping by the full-configuration defects in metal halide perovskites quantum dots | Xiao-Yi Liu
; Yu Cui
; Jia-Pei Deng
; Yi-Yan Liu
; Xu-Fei Ma
; Yu-Xuan Hou
; Jun-Ye Wei
; Zhi-Qing Li
; Zi-Wu Wang
; | Date: |
26 Jul 2022 | Abstract: | Metal halide perovskites quantum dots (MHPQDs) have aroused enormous
interesting in the photovoltaic and photoelectric because of their marvelous
properties and size characteristics. However, one of key problems that how to
systematically analyze charge carriers trapping by different defects is still a
challenge task. Here, we study nonradiation multiphonon processes of the charge
carrier trapping by various defects in MHPQDs based on the well-known
Huang-Rhys model, in which a method of fullconfiguration defect, including
different defect species with variable depth and lattice relaxation strength,
is developed by introducing a localization parameter in the quantum defect
model. With the help of this method, these fastest trapping channels for charge
carriers transferring from the quantum dot ground state to different defects
are found. Furthermore, the dependences of the trapping time on the radius of
quantum dot, the defect depth and temperature are given. These results not only
enrich the knowledge of charge carrier trapping processes by defects, but
enlighten the designs of MHPQDs-based photovoltaic and photoelectric devices. | Source: | arXiv, 2207.12671 | Services: | Forum | Review | PDF | Favorites |
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