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Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high mobility strained Si quantum well | | K. Lai
; W. Pan
; D.C. Tsui
; S.A. Lyon
; M. Muhlberger
; F. Schaffler
; | | Date: |
21 Dec 2004 | | Journal: | Physical Review B 72, 081313 (R) 2005 DOI: 10.1103/PhysRevB.72.081313 | | Subject: | Mesoscopic Systems and Quantum Hall Effect; Strongly Correlated Electrons | cond-mat.mes-hall cond-mat.str-el | | Abstract: | The apparent metal-insulator transition is observed in a high quality two-dimensional electron system (2DES) in the strained Si quantum well of a Si/Si_{1-x}Ge_x heterostructure with mobility mu=1.9 x 10^5 cm^2/Vs at density n=1.45 x 10^{11} cm^{-2}. The critical density, at which the thermal coefficient of low T resistivity changes sign, is ~ 0.32 x 10^{11} cm^{-2}, so far the lowest observed in the Si 2D systems. In-plane magnetoresistance study was carried out in the higher density range where the 2DES shows the metallic-like behavior. It is observed that the in-plane magnetoresistance first increases as ~ B_{ip}^2 and then saturates to a finite value
ho(B_c) for B_{ip} > B_c. The full spin-polarization field B_c decreases monotonically with n but appears to saturate to a finite value as n approaches zero. Furthermore,
ho(B_c)/
ho(0) ~ 1.8 for all the densities ranging from 0.35 x 10^{11} to 1.45 x 10^{11} cm^{-2} and, when plotted versus B_{ip}/B_c, collapses onto a single curve. | | Source: | arXiv, cond-mat/0501532 | | Services: | Forum | Review | PDF | Favorites | |
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