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29 March 2024
 
  » arxiv » cond-mat/0503148

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Thermal enhancement of the antiferromagnetic exchange coupling between Fe epilayers separated by a crystalline ZnSe spacer
J. Varalda ; J. Milano ; A. J. A. de Oliveira ; E. M. Kakuno ; I. Mazzaro ; D. H. Mosca ; L. B. Steren ; M. Eddrief ; M. Marangolo ; D. Demaille ; V. H. Etgens ;
Date 7 Mar 2005
Subject Materials Science | cond-mat.mtrl-sci
AbstractWe have put into evidence the existence of an antiferromagnetic coupling between iron epilayers separated by a ZnSe crystalline semiconductor. The effect has been observed for ZnSe spacers thinner than 4 nm at room-temperature. The coupling constant increases linearly with temperature with a constant slope of ~5.5x 10-9 J/m2K. The mechanisms that may explain such exchange interaction are discussed in the manuscript. It results that thermally-induced effective exchange coupling mediated by spin-dependent on and off resonant tunnelling of electrons via localized mid-gap defect states in the ZnSe spacer layer appears to be the most plausible mechanism to induce the antiferromagnetic coupling.
Source arXiv, cond-mat/0503148
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