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20 April 2024

» arxiv » cond-mat/0508346

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Electronic structure and anisotropic transport properties in hexagonal YPtIn and LuAgGe ternary compounds
G. D. Samolyuk ; S. L. Bud’ko ; E. Morosan ; V. P. Antropov ; P. C. Canfield ;
Date:	15 Aug 2005
Subject:	Materials Science \| cond-mat.mtrl-sci
Abstract:	We present anisotropic, zero applied magnetic field, temperature dependent resistivity measurements on hexagonal, non-magnetic, YPtIn and LuAgGe single crystals. For these materials the in-plane resistivity, $ ho_{ab}$, is significantly higher than the $c$ - axis one, $ ho_c$, with $ ho_{ab}/ ho_c approx 1.4$ for YPtIn and $approx 4.2 - 4.7$ for LuAgGe. The connection between the electronic structure and the anisotropic transport properties is discussed using density functional calculations that link the observed anisotropy with a specific shape of Fermi surface and anisotropy of the Fermi velocities.
Source:	arXiv, cond-mat/0508346
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