|
| | | | |
| | | |
| Stat |
Members: 3645
Articles: 2'500'096
Articles rated: 2609
18 April 2024 |
|
| | | | |
|
Article overview
| |
|
|
An ion-implanted silicon single-electron transistor | | V.C. Chan
; D.R. McCamey
; T.M. Buehler
; A.J. Ferguson
; D.J. Reilly
; A.S. Dzurak
; R.G. Clark
; C. Yang
; D.N. Jamieson
; | | Date: |
14 Oct 2005 | | Abstract: | We report on the fabrication and electrical characterization at millikelvin temperatures of a novel silicon single-electron transistor (Si-SET). The island and source-drain leads of the Si-SET are formed by the implantation of phosphorus ions to a density above the metal-insulator-transition, with the tunnel junctions created by undoped regions. Surface gates above each of the tunnel junctions independently control the tunnel coupling between the Si-SET island and leads. The device shows periodic Coulomb blockade with a charging energy e$^2$/2C$_Sigma$ $sim$ 250 $mu$eV, and demonstrates a reproducible and controllable pathway to a silicon-based SET using CMOS processing techniques. | | Source: | arXiv, cond-mat/0510373 | | Services: | Forum | Review | PDF | Favorites | |
|
|
No review found.
Did you like this article?
Note: answers to reviews or questions about the article must be posted in the forum section.
Authors are not allowed to review their own article. They can use the forum section.
browser claudebot
|
| |
|
|
|
|
News, job offers and information for researchers and scientists:
| |
REGISTER