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18 April 2024 |
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Article overview
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An ion-implanted silicon single-electron transistor | V.C. Chan
; D.R. McCamey
; T.M. Buehler
; A.J. Ferguson
; D.J. Reilly
; A.S. Dzurak
; R.G. Clark
; C. Yang
; D.N. Jamieson
; | Date: |
14 Oct 2005 | Abstract: | We report on the fabrication and electrical characterization at millikelvin temperatures of a novel silicon single-electron transistor (Si-SET). The island and source-drain leads of the Si-SET are formed by the implantation of phosphorus ions to a density above the metal-insulator-transition, with the tunnel junctions created by undoped regions. Surface gates above each of the tunnel junctions independently control the tunnel coupling between the Si-SET island and leads. The device shows periodic Coulomb blockade with a charging energy e$^2$/2C$_Sigma$ $sim$ 250 $mu$eV, and demonstrates a reproducible and controllable pathway to a silicon-based SET using CMOS processing techniques. | Source: | arXiv, cond-mat/0510373 | Services: | Forum | Review | PDF | Favorites |
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