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Interplay of the exciton and electron-hole plasma recombination on the photoluminescence dynamics in bulk GaAs | A. Amo
; M. D. Martin
; L. Vina
; A. I. Toropov
; K. S. Zhuravlev
; | Date: |
26 Oct 2005 | Abstract: | We present a systematic study of the exciton/electron-hole plasma photoluminescence dynamics in bulk GaAs for various lattice temperatures and excitation densities. The competition between the exciton and electron-hole pair recombination dominates the onset of the luminescence. We show that the metal-to-insulator transition, induced by temperature and/or excitation density, can be directly monitored by the carrier dynamics and the time-resolved spectral characteristics of the light emission. The dependence on carrier density of the photoluminescence rise time is strongly modified around a lattice temperature of 49 K, corresponding to the exciton binding energy (4.2 meV). In a similar way, the rise-time dependence on lattice temperature undergoes a relatively abrupt change at an excitation density of 120-180x10^15 cm^-3, which is about five times greater than the calculated Mott density in GaAs taking into account many body corrections. | Source: | arXiv, cond-mat/0510706 | Services: | Forum | Review | PDF | Favorites |
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