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Low temperature STM on InAs (110) accumulation surfaces | L. Canali
; J.W.G. Wildoer
; O. Kerkhof
; L.P. Kouwenhoven
; | Date: |
14 Aug 1997 | Subject: | Mesoscopic Systems and Quantum Hall Effect; Materials Science | cond-mat.mes-hall cond-mat.mtrl-sci | Abstract: | The properties of InAs (110) surfaces have been investigated by means of low-temperature scanning tunneling microscopy and spectroscopy. A technique for ex-situ sulphur passivation has been developed to form an accumulation layer on such a surface. Tunneling spectroscopy at 4.2 K shows the presence of 2D subbands in the accumulation layer. Measurements in high-magnetic field demonstrate Landau quantization of the energy spectrum, both in the 2D subbands and the 3D bulk conduction band. | Source: | arXiv, cond-mat/9708098 | Services: | Forum | Review | PDF | Favorites |
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