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28 March 2024
 
  » arxiv » cond-mat/9708098

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Low temperature STM on InAs (110) accumulation surfaces
L. Canali ; J.W.G. Wildoer ; O. Kerkhof ; L.P. Kouwenhoven ;
Date 14 Aug 1997
Subject Mesoscopic Systems and Quantum Hall Effect; Materials Science | cond-mat.mes-hall cond-mat.mtrl-sci
AbstractThe properties of InAs (110) surfaces have been investigated by means of low-temperature scanning tunneling microscopy and spectroscopy. A technique for ex-situ sulphur passivation has been developed to form an accumulation layer on such a surface. Tunneling spectroscopy at 4.2 K shows the presence of 2D subbands in the accumulation layer. Measurements in high-magnetic field demonstrate Landau quantization of the energy spectrum, both in the 2D subbands and the 3D bulk conduction band.
Source arXiv, cond-mat/9708098
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