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Tunneling measurements of the coulomb pseudogap in a two-dimensional electron system in a quantizing magnetic field | E.V. Deviatov
; A.A. Shashkin
; V.T. Dolgopolov
; W. Hansen
; M. Holland
; | Date: |
1 Sep 1999 | Subject: | Mesoscopic Systems and Quantum Hall Effect | cond-mat.mes-hall | Affiliation: | Institute of Solid State Physics, Chernogolovka, Russia), W. Hansen (Institut für Angewandte Physik der Universität Hamburg, Hamburg, Germany), M. Holland (Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow, | Abstract: | We study the Coulomb pseudogap for tunneling into the two-dimensional electron system of high-mobility (Al,Ga)As/GaAs heterojunctions subjected to a quantizing magnetic field at filling factor $
u leq 1$. Tunnel current-voltage characteristics show that for the double maximum observed in the tunnel resistance at $
u approx 1$ the pseudogap is linear in energy with a slope that depends on filling factor, magnetic field, and temperature. We give a qualitative account of the filling factor dependence of the pseudogap slope and we confirm the recently reported appearance of another relaxation time for tunneling at $
u approx 1$. For the tunnel resistance peaks at $
u=1/3$ and 2/3 a completely different behaviour of the current-voltage curves is found and interpreted as manifestation of the fractional gap. | Source: | arXiv, cond-mat/9909011 | Services: | Forum | Review | PDF | Favorites |
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