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29 March 2024
 
  » arxiv » cond-mat/9909011

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Tunneling measurements of the coulomb pseudogap in a two-dimensional electron system in a quantizing magnetic field
E.V. Deviatov ; A.A. Shashkin ; V.T. Dolgopolov ; W. Hansen ; M. Holland ;
Date 1 Sep 1999
Subject Mesoscopic Systems and Quantum Hall Effect | cond-mat.mes-hall
AffiliationInstitute of Solid State Physics, Chernogolovka, Russia), W. Hansen (Institut für Angewandte Physik der Universität Hamburg, Hamburg, Germany), M. Holland (Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow,
AbstractWe study the Coulomb pseudogap for tunneling into the two-dimensional electron system of high-mobility (Al,Ga)As/GaAs heterojunctions subjected to a quantizing magnetic field at filling factor $ u leq 1$. Tunnel current-voltage characteristics show that for the double maximum observed in the tunnel resistance at $ u approx 1$ the pseudogap is linear in energy with a slope that depends on filling factor, magnetic field, and temperature. We give a qualitative account of the filling factor dependence of the pseudogap slope and we confirm the recently reported appearance of another relaxation time for tunneling at $ u approx 1$. For the tunnel resistance peaks at $ u=1/3$ and 2/3 a completely different behaviour of the current-voltage curves is found and interpreted as manifestation of the fractional gap.
Source arXiv, cond-mat/9909011
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