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Article overview
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Impurity pinning in transport through 1D Mott-Hubbard and spin gap insulators | Vadim Ponomarenko
; Naoto Nagaosa
; | Date: |
29 Sep 1999 | Subject: | cond-mat | Affiliation: | SUNY at Stony Brook, USA and A.F.Ioffe PTI, St. Petersburg, Russia) and Naoto Nagaosa (Department of Applied Physics, University of Tokyo | Abstract: | A low energy crossover (see cond-mat/9711167) induced by Fermi liquid reservoirs in transport through a 1D Mott-Hubbard insulator of finite length $L$ is examined in the presence of impurity pinning. Under the assumption that the Hubbard gap 2M is large enough: $M > T_L equiv v_c/L$ ($v_c$: charge velocity in the wire) and the impurity backscattering rate $Gamma_1 ll T_L$, the conductance vs. voltage/temperature displays a zero-energy resonance. Transport through a spin gapped 1D system is also described availing of duality between the backscattered current of this system and the direct current of the Mott-Hubbard insulator. | Source: | arXiv, cond-mat/9909410 | Services: | Forum | Review | PDF | Favorites |
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