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Electronic Transport in a Three-dimensional Network of 1-D Bismuth Quantum Wires | | T. E. Huber
; M. J. Graf
; | | Date: |
15 Oct 1999 | | Subject: | Materials Science | cond-mat.mtrl-sci | | Abstract: | The resistance R of a high density network of 6 nm diameter Bi wires in porous Vycor glass is studied in order to observe its expected semiconductor behavior. R increases from 300 K down to 0.3 K. Below 4 K, where R varies approximately as ln(1/T), the order-of-magnitude of the resistance rise, as well as the behavior of the magnetoresistance are consistent with localization and electron-electron interaction theories of a one-dimensional disordered conductor in the presence of strong spin-orbit scattering. We show that this behaviour and the surface-enhanced carrier density may mask the proposed semimetal-to-semiconductor transition for quantum Bi wires. | | Source: | arXiv, cond-mat/9910241 | | Services: | Forum | Review | PDF | Favorites | |
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