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Thermally Activated Deviations from Quantum Hall Plateaus | | M. M. Fogler
; B. I. Shklovskii
; | | Date: |
20 Sep 1994 | | Journal: | Solid State Commun. 94, 503 (1994) | | Subject: | cond-mat | | Abstract: | The Hall conductivity $sigma_{
m xy}$ of a two-dimensional electron system is quantized in units of $e^2/h$ when the Fermi level is located in the mobility gap between two Landau levels. We consider the deviation of $sigma_{
m xy}$ from a quantized value caused by the thermal activation of electrons to the extended states for the case of a long range random potential. This deviation is of the form $sigma_{
m xy}^*exp(-Delta/T)$. The prefactor $sigma_{
m xy}^*$ is equal to $e^2/h$ at temperatures above a characteristic temperature $T_2$. With the temperature decreasing below $T_2$, $sigma_{
m xy}^*$ decays according to a power law: $sigma_{
m xy}^* = frac{e^2}{h}(T/T_2)^gamma$. Similar results are valid for a fractional Hall plateau near filling factor $p/q$ if $e$ is replaced by the fractional charge $e/q$. | | Source: | arXiv, cond-mat/9409083 | | Services: | Forum | Review | PDF | Favorites | |
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