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The onset of exciton absorption in modulation doped GaAs quantum wells | | G. Yusa
; H. Shtrikman
; I. Bar-Joseph
; | | Date: |
31 Mar 2000 | | Subject: | Mesoscopic Systems and Quantum Hall Effect | cond-mat.mes-hall | | Abstract: | We study the evolution of the absorption spectrum of a modulation doped GaAs/AlGaAs semiconductor quantum well with decreasing the carrier density. We find that there is a critical density which marks the transition from a Fermi edge singularity to a hydrogen-like behavior. At this density both the lineshape and the transitions energies of the excitons change. We study the density dependence of the singularity exponent $alpha $ and show that disorder plays an important role in determining the energy scale over which it grows. | | Source: | arXiv, cond-mat/0003505 | | Services: | Forum | Review | PDF | Favorites | |
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