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19 April 2024

» arxiv » cond-mat/0004312

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Analysis of the Metallic Phase of Two-Dimensional Holes in SiGe in Terms of Temperature Dependent Screening
V. Senz ; T. Ihn ; T. Heinzel ; K. Ensslin ; G. Dehlinger ; D. Grutzmacher ; U. Gennser ;
Date:	18 Apr 2000
Journal:	Phys. Rev. Lett., Vol. 85 No. 20, p.4357, Nov 2000
Subject:	Strongly Correlated Electrons; Mesoscopic Systems and Quantum Hall Effect \| cond-mat.str-el cond-mat.mes-hall
Affiliation:	Laboratory of Solid State Physics, ETH Zurich, Switzerland. Paul Scherrer Institut, Switzerland
Abstract:	We find that temperature dependent screening can quantitatively explain the metallic behaviour of the resistivity on the metallic side of the so-called metal-insulator transition in p-SiGe. Interference and interaction effects exhibit the usual insulating behaviour which is expected to overpower the metallic background at sufficiently low temperatures. We find empirically that the concept of a Fermi-liquid describes our data in spite of the large r_s = 8.
Source:	arXiv, cond-mat/0004312
Other source:	[GID 247751] pmid11060637
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