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Spectroscopic fingerprints of a surface Mott-Hubbard insulator: the case of SiC(0001) | | G. Santoro
; S. Scandolo
; E. Tosatti
; | | Date: |
16 Jun 2000 | | Subject: | Strongly Correlated Electrons; Materials Science | cond-mat.str-el cond-mat.mtrl-sci | | Affiliation: | 1 and 2) ( SISSA and INFM, Via Beirut 2, Trieste, Italy, ICTP, Trieste, Italy | | Abstract: | We discuss the spectroscopic fingerprints that a surface Mott-Hubbard insulator should show at the intra-atomic level. The test case considered is that of the Si-terminated SiC(0001) sqrt{3}xsqrt{3} surface, which is known experimentally to be insulating. We argue that, due to the Mott-Hubbard phenomenon, spin unpaired electrons in the Si adatom dangling bonds are expected to give rise to a Si-2p core level spectrum with a characteristic three-peaked structure, as seen experimentally. This structure results from the joint effect of intra-atomic exchange, spatial anisotropy, and spin-orbit coupling. Auger intensities are also discussed. | | Source: | arXiv, cond-mat/0006261 | | Services: | Forum | Review | PDF | Favorites | |
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