| | |
| | |
Stat |
Members: 3643 Articles: 2'487'895 Articles rated: 2609
29 March 2024 |
|
| | | |
|
Article overview
| |
|
Pressure Dependence of the Barrier Height in Tunnel n-GaAs/Au Junctions | E.M. Dizhur
; A.N. Voronovsky
; A.Ya. Shul’man
; I.N. Kotel’nikov
; | Date: |
14 Oct 2000 | Journal: | Phys.Stat.Sol.(b)223 129 (2001) | Subject: | Materials Science | cond-mat.mtrl-sci | Affiliation: | Institute for High Pressure Physics of the RAS), A.Ya. Shul’man, I.N. Kotel’nikov (Institute of Radioengineering and Electronics of the RAS | Abstract: | The theory of tunnel current-voltage (I-V) characteristics of metal-semiconductor junctions based on the self-consistent solution of Poisson equation allows to get the Schottky-barrier height and the charged impurity concentration directly from the tunneling data. This approach was applied to the analysis of the low temperature experiments on tunneling under pressure up to 3 GPa in a piston-cylinder gauge. Here we present the barrier height versus pressure for heavily doped tunnel junctions and compare the obtained pressure dependence of the Schottky barrier with known behavior of the band gap under pressure taking into account the influence of the L- and X-valleys and DX centers. | Source: | arXiv, cond-mat/0010200 | Services: | Forum | Review | PDF | Favorites |
|
|
No review found.
Did you like this article?
Note: answers to reviews or questions about the article must be posted in the forum section.
Authors are not allowed to review their own article. They can use the forum section.
browser claudebot
|
| |
|
|
|
| News, job offers and information for researchers and scientists:
| |