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Analysis of the temperature-dependent quantum point contact conductance in view of the metal-insulator transition in two dimensions | | V. Senz
; T. Heinzel
; T. Ihn
; S. Lindemann
; R. Held
; K. Ensslin
; W. Wegscheider
; M. Bichler
; | | Date: |
12 Dec 2000 | | Journal: | J.Phys.Cond.Mat.13,3831(2001) | | Subject: | Mesoscopic Systems and Quantum Hall Effect | cond-mat.mes-hall | | Abstract: | The temperature dependence of the conductance of a quantum point contact has been measured. The conductance as a function of the Fermi energy shows temperature-independent fixed points, located at roughly multiple integers of $e^{2}/h$. Around the first fixed point at e$^{2}$/h, the experimental data for different temperatures can been scaled onto a single curve. For pure thermal smearing of the conductance steps, a scaling parameter of one is expected. The measured scaling parameter, however, is significantly larger than 1. The deviations are interpreted as a signature of the potential landscape of the quantum point contact, and of the source-drain bias voltage. We relate our results phenomenologically to the metal-insulator transition in two dimensions. | | Source: | arXiv, cond-mat/0012205 | | Services: | Forum | Review | PDF | Favorites | |
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