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28 March 2024
 
  » arxiv » cond-mat/0601029

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Observation of a Mott insulating ground state for Sn/Ge(111) at low temperature
R. Cortes ; A. Tejeda ; J. Lobo ; C. Didiot ; B. Kierren ; D. Malterre ; E.G. Michel ; A. Mascaraque ;
Date 2 Jan 2006
Subject Materials Science
AbstractWe report an investigation on the properties of 0.33 ML of Sn on Ge(111) at temperatures down to 5 K. Low-energy electron diffraction and scanning tunneling microscopy show that the (3x3) phase formed at 200 K, reverts to a new (root-3xroot-3)R30 phase below 30 K. The vertical distortion characteristic of the (3x3) phase is lost across the phase transition. Angle-resolved photoemission experiments show that concomitantly with the structural phase transition, a metal-insulator phase transition takes place. In agreement with theoretical predictions, the (root-3xroot-3)R30 ground state is interpreted as the experimental realization of a Mott insulator for a narrow half-filled band in a two-dimensional triangular lattice.
Source arXiv, cond-mat/0601029
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