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Observation of a Mott insulating ground state for Sn/Ge(111) at low temperature | R. Cortes
; A. Tejeda
; J. Lobo
; C. Didiot
; B. Kierren
; D. Malterre
; E.G. Michel
; A. Mascaraque
; | Date: |
2 Jan 2006 | Subject: | Materials Science | Abstract: | We report an investigation on the properties of 0.33 ML of Sn on Ge(111) at temperatures down to 5 K. Low-energy electron diffraction and scanning tunneling microscopy show that the (3x3) phase formed at 200 K, reverts to a new (root-3xroot-3)R30 phase below 30 K. The vertical distortion characteristic of the (3x3) phase is lost across the phase transition. Angle-resolved photoemission experiments show that concomitantly with the structural phase transition, a metal-insulator phase transition takes place. In agreement with theoretical predictions, the (root-3xroot-3)R30 ground state is interpreted as the experimental realization of a Mott insulator for a narrow half-filled band in a two-dimensional triangular lattice. | Source: | arXiv, cond-mat/0601029 | Services: | Forum | Review | PDF | Favorites |
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