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19 April 2024

» arxiv » cond-mat/0611342

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Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
Eduardo V. Castro ; K. S. Novoselov ; S. V. Morozov ; N. M. R. Peres ; J.M.B. Lopes dos Santos ; Johan Nilsson ; F. Guinea ; A. K. Geim ; A. H. Castro Neto ;
Date:	13 Nov 2006
Subject:	Materials Science; Strongly Correlated Electrons
Abstract:	We demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias. From the magneto-transport data (Shubnikov-de Haas measurements of the cyclotron mass), and using a tight binding model, we extract the value of the gap as a function of the electronic density. We show that the gap can be changed from zero to a value as large as 0.3 eV by using fields of $simleq 1$ V/nm, below the electric breakdown of SiO$_2$. The opening of a gap is clearly seen in the quantum Hall regime, where the zero-energy double step characteristic to the anomalous quantum Hall effect in unbiased bilayer graphene, splits into two, giving rise to an additional plateau at zero Hall conductivity, besides the standard quantum Hall sequence.
Source:	arXiv, cond-mat/0611342
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