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Broadband dielectric microwave microscopy on $mu$m length scales | | Alexander Tselev
; Steven M. Anlage
; Zhengkun Ma
; John Melngailis
; | | Date: |
25 Feb 2007 | | Subject: | Materials Science; Other | | Abstract: | We demonstrate that a near-field microwave microscope based on a transmission line resonator allows imaging in a substantially wide range of frequencies, so that the microscope properties approach those of a spatially-resolved impedance analyzer. In the case of an electric probe, the broadband imaging can be used in a direct fashion to separate contributions from capacitive and resistive properties of a sample at length scales on the order of one micron. Using a microwave near-field microscope based on a transmission line resonator we imaged the local dielectric properties of a Focused Ion Beam (FIB) milled structure on a high-dielectric-constant Ba_{0.6}Sr_{0.4}TiO_3 (BSTO) thin film in the frequency range from 1.3 GHz to 17.4 GHz. The electrostatic approximation breaks down already at frequencies above ~10 GHz for the probe geometry used, and a full-wave analysis is necessary to obtain qualitative information from the images. | | Source: | arXiv, cond-mat/0702573 | | Services: | Forum | Review | PDF | Favorites | |
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