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Article overview
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Pronounced Effect of pn-Junction Dimensionality on Tunnel Switch Sharpness | Sapan Agarwal
; Eli Yablonovitch
; | Date: |
1 Sep 2011 | Abstract: | Tunneling based field effect transistors (TFET’s) have the potential for very
sharp On/Off transitions if they exploit a sharp step in the density of states
for switching. The same principle applies in Backward Diodes. As is well-known,
the nature of the quantum density of states, is strongly dependent on
dimensionality. Hence we need to specify both the n-side and the p-side
dimensionality of pn junctions. For instance, we find that a typical bulk 3d-3d
tunneling pn junction has only a quadratic turn-on function, while a pn
junction consisting of two overlapping quantum wells (2d-2d) would have the
preferred step function response. Quantum confinement on each side of a pn
junction has the added benefit of significantly increasing the on-state tunnel
conductance at the turn-on threshold. We find that there are nine physically
distinguishable possibilities, 3d-3d, 2d-3d, 2d-2d, etc. Thus we introduce the
obligation of specifying the dimensionality on either side of pn junctions. | Source: | arXiv, 1109.0096 | Services: | Forum | Review | PDF | Favorites |
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