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Article overview
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Does P-type Ohmic Contact Exist in WSe2-metal Interfaces? | | Yangyang Wang
; Ruoxi Yang
; Ruge Quhe
; Hongxia Zhong
; Linxiao Cong
; Meng Ye
; Zeyuan Ni
; Zhigang Song
; Jinbo Yang
; Junjie Shi
; Ju Li
; Jing Lu
; | | Date: |
3 Aug 2015 | | Abstract: | Formation of low-resistance metal contacts is the biggest challenge that
masks the intrinsic exceptional electronic properties of 2D WSe2 devices. We
present the first comparative study of the interfacial properties between ML/BL
WSe2 and Sc, Al, Ag, Au, Pd, and Pt contacts by using ab initio energy band
calculations with inclusion of the spin-orbital coupling (SOC) effects and
quantum transport simulations. The interlayer coupling tends to reduce both the
electron and hole Schottky barrier heights (SBHs) and alters the polarity for
WSe2-Au contact, while the SOC chiefly reduces the hole SBH. In the absence of
the SOC, Pd contact has the smallest hole SBH with a value no less than 0.22
eV. Dramatically, Pt contact surpasses Pd contact and becomes p-type Ohmic or
quasi-Ohmic contact with inclusion of the SOC. Our study provides a theoretical
foundation for the selection of favorable metal electrodes in ML/BL WSe2
devices. | | Source: | arXiv, 1508.0300 | | Services: | Forum | Review | PDF | Favorites | |
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