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14 October 2024 |
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Article overview
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Predicted universality class of step bunching found on DC-heated Si(111) surfaces | | Alexey Kozlov
; Alexander Samardak
; Nikolay Chernousov
; Hristina Popova
; Magdalena A. Zaluska-Kotur
; Alberto Pimpinelli
; Vesselin Tonchev
; | | Date: |
1 Jun 2022 | | Abstract: | Concerted experimental and numerical studies of step bunching on vicinal
crystal surfaces resulting from step-down electromigration of partially charged
adatoms, confirmed the theoretical prediction of scaling dependence of the
minimal bunch distance $l_{
m min}$ on the bunch size $N$: $l_{
m min} sim
N^{-gamma}$, with $gamma = 2/3$. The value of the so called size-scaling
exponent $gamma$ was observed in experiments on vicinal surfaces of
semiconducting, metallic, and dielectric materials. Careful theoretical
investigations and numerical calculations predict a second value of $gamma =
1/2$. However, this value is still not been reported from experiments. And we
report here experimental observation of step bunching in the universality class
relative to $gamma = 1/2$. This is achieved by monitoring step flow during
sublimation of Si(111)-vicinals heated by a direct step-down current at
~1200$^circ$C. In the experiment we also measure other characteristic for the
bunching quantities, such as the mean total number of steps in the bunch $N$
and the mean bunch width $W$. We then compare our findings with published
experimental and numerical data to arrive at a theoretically consistent
framework in terms of universality classes. The ultimate benefit of our study
is not only to advance fundamental knowledge but also to provide further
guidance for bottom-up synthesis of vicinal nanotemplates. | | Source: | arXiv, 2206.00190 | | Services: | Forum | Review | PDF | Favorites | |
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