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06 October 2024 |
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Article overview
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Scattering anisotropy in HgTe (013) quantum well | | D. A. Khudaiberdiev
; M. L. Savchenko
; D. A. Kozlov
; N. N. Mikhailov
; Z. D. Kvon
; | | Date: |
1 Jun 2022 | | Abstract: | We report on a detailed experimental study of the electron transport
anisotropy in HgTe (013) quantum well of 22 nm width in the directions $[100]$
and $[03ar{1}]$ as the function of the electron density $n$. The anisotropy
is absent at minimal electron density near the charge neutrality point. The
anisotropy increases with the increase of n and reaches about 10% when the
Fermi level is within the first subband H1. There is a sharp increase of the
anisotropy (up to 60%) when the Fermi level reaches the second subband E2. We
conclude that the first effect is due to the small intra-subband anisotropic
interface roughness scattering, and the second one is due to the strongly
anisotropic inter-subband roughness scattering, but the microscopical reason of
such a strong change in the anisotropy remains unknown. | | Source: | arXiv, 2206.00306 | | Services: | Forum | Review | PDF | Favorites | |
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