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Article overview
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Superexchange coupling of donor qubits in silicon | | Mushita M. Munia
; Serajum Monir
; Edyta N. Osika
; Michelle Y. Simmons
; Rajib Rahman
; | | Date: |
1 Sep 2023 | | Abstract: | Atomic engineering in a solid-state material has the potential to
functionalize the host with novel phenomena. STM-based lithographic techniques
have enabled the placement of individual phosphorus atoms at selective lattice
sites of silicon with atomic precision. Here, we show that by placing four
phosphorus donors spaced 10-15 nm apart from their neighbours in a linear
chain, it is possible to realize coherent spin coupling between the end dopants
of the chain, analogous to the superexchange interaction in magnetic materials.
Since phosphorus atoms are a promising building block of a silicon quantum
computer, this enables spin coupling between their bound electrons beyond
nearest neighbours, allowing the qubits to be spaced out by 30-45 nm. The added
flexibility in architecture brought about by this long-range coupling not only
reduces gate densities but can also reduce correlated noise between qubits from
local noise sources that are detrimental to error correction codes. We base our
calculations on a full configuration interaction technique in the atomistic
tight-binding basis, solving the 4-electron problem exactly, over a domain of a
million silicon atoms. Our calculations show that superexchange can be tuned
electrically through gate voltages where it is less sensitive to charge noise
and donor placement errors. | | Source: | arXiv, 2309.00276 | | Services: | Forum | Review | PDF | Favorites | |
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