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Article overview
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Transport and electrical properties of cryogenic thermoelectric FeSb2: the effect of isoelectronic and hole doping | | Deepak Gujjar
; Sunidhi Gujjar
; V. K. Malik
; Hem C. Kandpal
; | | Date: |
1 Nov 2023 | | Abstract: | Thermoelectric materials operating at cryogenic temperatures are in high
demand for efficient cooling and power generation in applications ranging from
superconductors to quantum computing. The narrow band-gap semiconductor FeSb2,
known for its colossal Seebeck coefficient, holds promise for such
applications, provided its thermal conductivity value can be reduced. This
study investigates the impact of isoelectronic substitution (Bi) and hole
doping (Pb) at the Sb site on the transport properties of FeSb2, with a
particular focus on thermal conductivity (k{appa}). Polycrystalline FeSb2
powder, along with Bi- and Pb-doped samples, were synthesized using a simple
co-precipitation approach, followed by thermal treatment in an H2 atmosphere.
XRD and SEM analysis confirms the formation of the desired phase pre- and
post-consolidation using spark plasma sintering (SPS). The consolidation
process resulted in a high compaction density and the formation of
submicrometer-sized grains, as substantiated by electron backscattered
diffraction (EBSD) analysis. Substituting 1% of Bi and Pb at the Sb site
successfully suppressed the thermal conductivity (k{appa}) from ~15 W/m-K in
pure FeSb2 to ~10 and ~8.7 W/m-K, respectively. Importantly, resistivity
measurements revealed a metal-to-insulator transition at around 6.5 K in
undoped FeSb2 and isoelectronically Bi-substituted FeSb2, suggesting the
existence of metallic surface states and provides valuable evidence for the
perplexing topological behavior exhibited by FeSb2. | | Source: | arXiv, 2311.00326 | | Services: | Forum | Review | PDF | Favorites | |
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