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19 April 2024 |
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InAs/InP single quantum wire formation and emission at 1.5 microns | | B. Alén
; D. Fuster
; Y. González
; L. González
; J. Martínez-Pastor
; M. U. González
; J. M. García
; | | Date: |
6 Jun 2006 | | Subject: | Mesoscopic Systems and Quantum Hall Effect | | Abstract: | Isolated InAs/InP self-assembled quantum wires have been successfully grown using in situ accumulated stress measurements to adjust the optimal InAs thickness. Atomic force microscopy imaging shows highly asymmetric nanostructures with average length exceeding more than ten times their width. High resolution optical investigation of as-grown samples reveals strong photoluminescence from individual quantum wires at 1.5 microns. Additional sharp features are related to monolayer fluctuations of the 2D InAs layer present during the early stages of the quantum wire self-assembling process. | | Source: | arXiv, cond-mat/0606134 | | Services: | Forum | Review | PDF | Favorites | |
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