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25 April 2024
 
  » arxiv » cond-mat/0606182

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Origin and Perspectives of High Mobility in LaAlO3/SrTiO3 Structures
G. Herranz ; M. Basletic ; M. Bibes ; C. Carretero ; E. Tafra ; E. Jacquet ; K. Bouzehouane ; C. Deranlot ; J.-L. Maurice ; A. Hamzic ; J.-P. Contour ; A. Barthelemy ; A. Fert ;
Date 7 Jun 2006
Subject Materials Science
AbstractLaAlO3/SrTiO3 structures showing high mobility conduction have recently aroused large expectations as they might represent a major step towards the conception of all-oxide electronics devices. For the development of these technological applications a full understanding of the dimensionality and origin of the conducting electronic system is crucial. To shed light on this issue, we have investigated the magnetotransport properties of a LaAlO3 layer epitaxially grown at low oxygen pressure on a TiO2-terminated (001)-SrTiO3 substrate. In agreement with recent reports, a low-temperature mobility of about 10^4 cm2/Vs has been found. We conclusively show that the electronic system is three-dimensional, excluding any interfacial confinement of carriers. We argue that the high-mobility conduction originates from the doping of SrTiO3 with oxygen vacancies and that it extends over hundreds of microns into the SrTiO3 substrate. Such high mobility SrTiO3-based heterostructures have a unique potential for electronic and spintronics devices.
Source arXiv, cond-mat/0606182
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