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Elastically Relaxed Free-standing Strained-Si Nanomembranes | | Michelle M. Roberts
; Levente J. Klein
; Don E. Savage
; Keith A. Slinker
; Mark Friesen
; George Celler
; Mark A. Eriksson
; Max G. Lagally
; | | Date: |
15 Jun 2006 | | Journal: | Nature Materials v5, p388 (2006) | | Subject: | Mesoscopic Systems and Quantum Hall Effect | | Abstract: | Strain plays a critical role in the properties of materials. In silicon and silicon-germanium, strain provides a mechanism for control of both carrier mobility and band offsets. In materials integra-tion, strain is typically tuned through the use of dislocations and elemental composition. We demonstrate a versatile method to control strain, by fabricating membranes in which the final strain state is controlled by elastic strain sharing, i.e., without the formation of defects. We grow Si/SiGe layers on a substrate from which they can be released, forming nanomembranes. X-ray diffraction measurements confirm a final strain predicted by elasticity theory. The effec-tiveness of elastic strain to alter electronic properties is demonstrated by low-temperature longi-tudinal-Hall effect measurements on a strained-Si quantum well before and after release. Elastic strain sharing and film transfer offers an intriguing path towards complex, multiple-layer struc-tures in which each layer’s properties are controlled elastically, without the introduction of unde-sirable defects. | | Source: | arXiv, cond-mat/0606423 | | Services: | Forum | Review | PDF | Favorites | |
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