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16 April 2024

» arxiv » cond-mat/0606503

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Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer
Young Min Lee ; Jun Hayakawa ; Shoji Ikeda ; Fumihiro Matsukura ; Hideo Ohno ;
Date:	20 Jun 2006
Subject:	Materials Science; Other
Abstract:	We investigated the relationship between tunnel magnetoresistance (TMR) ratio and the crystallization of CoFeB layers through annealing in magnetic tunnel junctions (MTJs) with MgO barriers that had CoFe/Ru/CoFeB synthetic ferrimagnet pinned layers with varying Ru spacer thickness (tRu). The TMR ratio increased with increasing annealing temperature (Ta) and tRu, reaching 361% at Ta = 425C, whereas the TMR ratio of the MTJs with pinned layers without Ru spacers decreased at Ta over 325C. Ruthenium spacers play an important role in forming an (001)-oriented bcc CoFeB pinned layer, resulting in a high TMR ratio through annealing at high temperatures.
Source:	arXiv, cond-mat/0606503
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