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19 April 2024

» arxiv » cond-mat/0606661

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Shot noise of a multiwalled carbon nanotube field effect transistor
F. Wu ; T. Tsuneta ; R. Tarkiainen ; D. Gunnarsson ; T. H. Wang ; P. J. Hakonen ;
Date:	26 Jun 2006
Subject:	Mesoscopic Systems and Quantum Hall Effect
Abstract:	We have investigated shot noise in a 6-nm-diameter, semiconducting multiwalled carbon nanotube FET at 4.2 K over the frequency range 600 - 950 MHz. We find a transconductance of 3 - 3.5 $mu$S for optimal positive and negative source-drain voltages V. For the gate referred input voltage noise, we obtain 0.2 and 0.3 $mu{V}/ sqrt{Hz}$ for V>0 and V<0, respectively. As effective charge noise this corresponds to $2-3 cdot 10^{-5}$ e/$sqrt{Hz}$.
Source:	arXiv, cond-mat/0606661
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