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26 April 2024
 
  » arxiv » cond-mat/0606666

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Epitaxial film growth and magnetic properties of Co_2FeSi
H. Schneider ; G. Jakob ; M. Kallmayer ; H. J. Elmers ; M. Cinchetti ; B. Balke ; S. Wurmehl ; C. Felser ; M. Aeschlimann ; H. Adrian ;
Date 26 Jun 2006
Subject Materials Science
AbstractWe have grown thin films of the Heusler compound Co_2FeSi by RF magnetron sputtering. On (100)-oriented MgO substrates we find fully epitaxial (100)-oriented and L2_1 ordered growth. On Al_2O_3 (11-20) substrates, the film growth is (110)-oriented, and several in-plane epitaxial domains are observed. The temperature dependence of the electrical resistivity shows a power law with an exponent of 7/2 at low temperatures. Investigation of the bulk magnetic properties reveals an extrapolated saturation magnetization of 5.0 mu_B/fu at 0 K. The films on Al_2O_3 show an in-plane uniaxial anisotropy, while the epitaxial films are magnetically isotropic in the plane. Measurements of the X-ray magnetic circular dichroism of the films allowed us to determine element specific magnetic moments. Finally we have measured the spin polarization at the surface region by spin-resolved near-threshold photoemission and found it strongly reduced in contrast to the expected bulk value of 100%. Possible reasons for the reduced magnetization are discussed.
Source arXiv, cond-mat/0606666
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