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On the mobility reduction in quasi ballistic DG nano MOSFET | | K. Huet
; J. Saint-Martin
; A. Bournel
; G. Ghibaudo
; S. Galdin-Retailleau
; P. Dollfus
; M. Mouis
; | | Date: |
9 Jan 2007 | | Subject: | Other | | Abstract: | The concept of mobility is discussed in the case of unstrained and strained nanoscale DG MOSFET thanks to particle Monte Carlo device simulation. As experimentally observed elsewhere, the mobility extracted from electrical characteristics decreases with the shrinking of the channel length. We show that the mobility may be linked to the long-channel mobility and to a "ballistic mobility" using Mathiessen’s rule. Despite its simplicity, such a model gives a good description of the physical operation of studied transistors, which is confirmed by successful comparison with experimental results. | | Source: | arXiv, cond-mat/0701159 | | Services: | Forum | Review | PDF | Favorites | |
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