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Vibrational behaviour of a realistic amorphous-silicon model | | J. K. Christie
; S. N. Taraskin
; S. R. Elliott
; | | Date: |
9 Jan 2007 | | Subject: | Materials Science | | Abstract: | The vibrational properties of a high-quality realistic model of amorphous silicon are examined. The longitudinal and transverse dynamical structure factors are calculated, and fitted to a damped harmonic oscillator (DHO) function. The width $Gamma$ of the best-fit DHO to the longitudinal dynamical structure factor scales approximately as $k^{2}$ for wavevectors $klesssim0.55 extrm{AA}^{-1}$, which is above the Ioffe-Regel crossover frequency separating the propagating and diffusing regimes, occurring at $k=0.38pm0.03 extrm{AA}^{-1}$. Using the DHO function as a fitting function for the transverse dynamical structure factor (without theoretical justification), gives a dependence of $Gammapropto k^{alpha}$ with $alphasim2.5$ for wavevectors $klesssim0.7 extrm{AA}^{-1}$. There was no evidence for $Gammapropto k^{4}$ behaviour for either polarization. | | Source: | arXiv, cond-mat/0701170 | | Services: | Forum | Review | PDF | Favorites | |
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