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25 January 2025

» arxiv » cond-mat/0701391

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Mechanism of enhancement of electromagnetic properties of MgB2 by nano-SiC doping
S.X. Dou ; O. Shcherbakova ; W.K. Yeoh ; J.H. Kim ; S. Soltanian ; X.L. Wang ; C. Senatore ; R. Flukiger ; M. Dhalle ; O. Husnjak ; E. Babic ;
Date:	17 Jan 2007
Subject:	Superconductivity
Abstract:	A comparative study of pure, SiC, and C doped MgB2 wires has revealed that the SiC doping allowed C substitution and MgB2 formation to take place simultaneously at low temperatures. C substitution enhances Hc2, while the defects, small grain size and nanoinclusions induced by C incorporation and low temperature processing are responsible for the improvement in Jc. The irreversibility field (Hirr) for the SiC doped sample reached the benchmarking value of 10 T at 20 K, exceeding that of NbTi at 4.2 K. This dual reaction model also enables us to predict desirable dopants for enhancing the performance properties of MgB2.
Source:	arXiv, cond-mat/0701391
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