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1/f Tunnel Current Noise through Si-bound Alkyl Monolayers | | Nicolas Clement
; Stephane Pleutin
; Oliver Seitz
; Stephane Lenfant
; Dominique Vuillaume
; | | Date: |
19 Jan 2007 | | Subject: | Mesoscopic Systems and Quantum Hall Effect; Materials Science | | Abstract: | We report on the low frequency tunnel current noise characteristics of an organic monolayer tunnel junction. The measured devices, n-Si/alkyl chain (C18H37)/Al junctions, exhibit a clear 1/f γ power spectrum noise with 1< γ <1.2. We observe a slightly bias dependent background of the normalized power spectrum current noise (SI/I^2). However, a local increase is also observed over a certain bias range, mainly if V > 0.4 V, with an amplitude varying from device to device. We attribute this effect to an energy-dependent trap-induced tunnel current. We find that the background noise SI scales with and a model is proposed which is consistent with our experimental data. | | Source: | arXiv, cond-mat/0701477 | | Services: | Forum | Review | PDF | Favorites | |
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