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Complex permittivity of a biased superlattice | | A. Hernández-Cabrera
; P. Aceituno
; F.T. Vasko
; | | Date: |
21 Jan 2007 | | Subject: | Other; Materials Science | | Abstract: | Intersubband response in a superlattice subjected to a homogeneous electric field (biased superlattice with equipopulated levels) is studied within the tight-binding approximation, taking into account the interplay between homogeneous and inhomogeneous mechanisms of broadening. The complex dielectric permittivity is calculated beyond the Born approximation for a wide spectral region. A detectable gain below the resonance is obtained for the low-doped $GaAs$-based biased superlattice in the THz spectral region. Conditions of the stimulated emission regime for metallic and dielectric waveguide structures are discussed. | | Source: | arXiv, cond-mat/0701503 | | Services: | Forum | Review | PDF | Favorites | |
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