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Eight-band calculations of strained InAs/GaAs quantum dots compared with one, four, and six-band approximations | Craig Pryor
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29 Oct 1997 | Subject: | Materials Science; Mesoscopic Systems and Quantum Hall Effect | cond-mat.mtrl-sci cond-mat.mes-hall | Affiliation: | Lund University | Abstract: | The electronic structure of pyramidal shaped InAs/GaAs quantum dots is calculated using an eight-band strain dependent $f kcdot p$ Hamiltonian. The influence of strain on band energies and the conduction-band effective mass are examined. Single particle bound-state energies and exciton binding energies are computed as functions of island size. The eight-band results are compared with those for one, four and six bands, and with results from a one-band approximation in which m(r) is determined by the local value of the strain. The eight-band model predicts a lower ground state energy and a larger number of excited states than the other approximations. | Source: | arXiv, cond-mat/9710304 | Services: | Forum | Review | PDF | Favorites |
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