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25 April 2024

» pubmed » pmid11736597

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Ambipolar electrical transport in semiconducting single-wall carbon nanotubes
R Martel ; V Derycke ; C Lavoie ; J Appenzeller ; K K Chan ; J Tersoff ; P Avouris ;
Date:	17 Dec 2001
Journal:	Phys Rev Lett, 87 (25), 256805
Abstract:	Ambipolar electrical transport is reported in single-wall carbon nanotube (SWNT) field-effect transistors. In particular, the properties of SWNT junctions to TiC are discussed in detail. The carbide-nanotube junctions are abrupt and robust. In contrast to planar junctions, these contacts present low resistance for the injection of both p- and n-type carriers--the apparent barrier height of the junction is modified by the gate field. Thus SWNTs offer the novel possibility of ambipolar Ohmic contacts.
Source:	PubMed, pmid11736597
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