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28 March 2024
 
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Results 1 to 20 of 59 for query "A.Yuryev". (0.00 sec.)

[    1    2    3    ]   Next
1.
Optical beam-induced scattering mode of mid-IR laser microscopy: a method for defect investigation in near-surface and near-interface regions of bulk semiconductors
O. V. Astafiev; V. P. Kalinushkin; V. A. Yuryev;
3 Jun 2011
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2.
Mid-IR-laser microscopy as a tool for defect investigation in bulk semiconductors
O. V. Astafiev; V. P. Kalinushkin; V. A. Yuryev;
3 Jun 2011
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3.
Capacitance investigation of Ge nanoclusters on a silicon (001) surface grown by MBE at low temperatures
O. V. Feklisova; E. B. Yakimov; L. V. Arapkina; V. A. Chapnin; K. V. Chizh; V. P. Kalinushkin; V. A. Yuryev;
10 Aug 2009
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4.
Evolution of Ge wetting layers growing on smooth and rough Si (001) surfaces: isolated {105} facets as a kinetic factor of stress relaxation
Larisa V. Arapkina; Kirill V. Chizh; Vladimir P. Dubkov; Mikhail S. Storozhevykh; Vladimir A. Yuryev;
6 Jul 2022
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5.
Elastic Mid-Infrared Light Scattering: a Basis for Microscopy of Large-Scale Electrically Active Defects in Semiconducting Materials
V. P. Kalinushkin; V. A. Yuryev; O. V. Astafiev;
10 Aug 2010
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6.
Structure and peculiarities of the (8 x n)-type Si(001) surface prepared in a molecular-beam epitaxy chamber: a scanning tunneling microscopy study
L. V. Arapkina; V. M. Shevlyuga; V. A. Yuryev;
10 Aug 2009
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7.
The formation of intermediate layers in covered Ge/Si heterostructures with low-temperature quantum dots: a study using high-resolution transmission electron microscopy and Raman scattering
Mikhail S. Storozhevykh; Larisa V. Arapkina; Sergey M. Novikov; Oleg V. Uvarov; Vladimir A. Yuryev;
16 Jul 2019
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8.
Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: A study by high resolution STM and in situ RHEED
L. V. Arapkina; V. A. Yuryev; K. V. Chizh; V. M. Shevlyuga; M. S. Storojevyh; L. A. Krylova;
20 Sep 2010
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9.
On atomic structure of Ge huts growing on the Ge/Si(001) wetting layer
Larisa V. Arapkina; Vladimir A. Yuryev;
10 Oct 2012
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10.
Nucleation of Ge clusters at high temperatures on Ge/Si(001) wetting layer
V. A. Yuryev; L. V. Arapkina;
30 May 2011
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11.
Application of scanning mid-IR-laser microscopy for characterization of semiconductor materials for photovoltaics
V. P. Kalinushkin; O. V. Astafiev; V. A. Yuryev;
24 Aug 2010
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12.
Defects of Ge quantum dot arrays on the Si(001) surface
V. A. Yuryev; L. V. Arapkina;
6 Aug 2009
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13.
Nucleation of Ge quantum dots on the Si(001) surface
Larisa V. Arapkina; Vladimir A. Yuryev;
27 Jul 2009
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14.
Peculiarities and evolution of Raman spectra of multilayer Ge/Si(001) heterostructures containing arrays of low-temperature MBE-grown Ge quantum dots of different size and number density: Experimental studies and numerical simulations
Mikhail S. Storozhevykh; Larisa V. Arapkina; Sergey M. Novikov; Valentyn S. Volkov; Aleksey V. Arsenin; Oleg V. Uvarov; Vladimir A. Yuryev;
3 Apr 2021
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15.
Metal silicide/poly-Si Schottky diodes for uncooled microbolometers
K. V. Chizh; V. A. Chapnin; V. P. Kalinushkin; V. Ya. Resnik; M. S. Storozhevykh; V. A. Yuryev;
29 Jan 2013
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16.
Application of elastic mid-IR-laser-light scattering for non-destructive inspection in microelectronics
V. P. Kalinushkin; V. A. Yuryev; O. V. Astafiev; A. N. Buzynin; N. I. Bletskan;
7 Jun 2011
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17.
Application of elastic mid-IR light scattering for inspection of internal gettering operations
O. V. Astafiev; A. N. Buzynin; V. P. Kalinushkin; V. A. Yuryev;
6 Jun 2011
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18.
An initial phase of Ge hut array formation at low temperature on Si(001)
Larisa V. Arapkina; Vladimir A. Yuryev;
7 Feb 2011
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19.
CMOS compatible dense arrays of Ge quantum dots on the Si(001) surface: Hut cluster nucleation, atomic structure, and array life cycle during UHV MBE growth
L. V. Arapkina; V. A. Yuryev;
20 Sep 2010
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20.
Phase transition between (2 x 1) and c(8 x 8) reconstructions observed on the Si(001) surface around 600C
L. V. Arapkina; V. A. Yuryev; V. M. Shevlyuga; K. V. Chizh;
2 Jul 2010
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