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28 March 2024
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59
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A.Yuryev
". (0.00 sec.)
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1.
Optical beam-induced scattering mode of mid-IR laser microscopy: a method for defect investigation in near-surface and near-interface regions of bulk semiconductors
O. V. Astafiev
;
V. P. Kalinushkin
;
V. A. Yuryev
;
3 Jun 2011
2.
Mid-IR-laser microscopy as a tool for defect investigation in bulk semiconductors
O. V. Astafiev
;
V. P. Kalinushkin
;
V. A. Yuryev
;
3 Jun 2011
3.
Capacitance investigation of Ge nanoclusters on a silicon (001) surface grown by MBE at low temperatures
O. V. Feklisova
;
E. B. Yakimov
;
L. V. Arapkina
;
V. A. Chapnin
;
K. V. Chizh
;
V. P. Kalinushkin
;
V. A. Yuryev
;
10 Aug 2009
4.
Evolution of Ge wetting layers growing on smooth and rough Si (001) surfaces: isolated {105} facets as a kinetic factor of stress relaxation
Larisa V. Arapkina
;
Kirill V. Chizh
;
Vladimir P. Dubkov
;
Mikhail S. Storozhevykh
;
Vladimir A. Yuryev
;
6 Jul 2022
5.
Elastic Mid-Infrared Light Scattering: a Basis for Microscopy of Large-Scale Electrically Active Defects in Semiconducting Materials
V. P. Kalinushkin
;
V. A. Yuryev
;
O. V. Astafiev
;
10 Aug 2010
6.
Structure and peculiarities of the (8 x n)-type Si(001) surface prepared in a molecular-beam epitaxy chamber: a scanning tunneling microscopy study
L. V. Arapkina
;
V. M. Shevlyuga
;
V. A. Yuryev
;
10 Aug 2009
7.
The formation of intermediate layers in covered Ge/Si heterostructures with low-temperature quantum dots: a study using high-resolution transmission electron microscopy and Raman scattering
Mikhail S. Storozhevykh
;
Larisa V. Arapkina
;
Sergey M. Novikov
;
Oleg V. Uvarov
;
Vladimir A. Yuryev
;
16 Jul 2019
8.
Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: A study by high resolution STM and in situ RHEED
L. V. Arapkina
;
V. A. Yuryev
;
K. V. Chizh
;
V. M. Shevlyuga
;
M. S. Storojevyh
;
L. A. Krylova
;
20 Sep 2010
9.
On atomic structure of Ge huts growing on the Ge/Si(001) wetting layer
Larisa V. Arapkina
;
Vladimir A. Yuryev
;
10 Oct 2012
10.
Nucleation of Ge clusters at high temperatures on Ge/Si(001) wetting layer
V. A. Yuryev
;
L. V. Arapkina
;
30 May 2011
11.
Application of scanning mid-IR-laser microscopy for characterization of semiconductor materials for photovoltaics
V. P. Kalinushkin
;
O. V. Astafiev
;
V. A. Yuryev
;
24 Aug 2010
12.
Defects of Ge quantum dot arrays on the Si(001) surface
V. A. Yuryev
;
L. V. Arapkina
;
6 Aug 2009
13.
Nucleation of Ge quantum dots on the Si(001) surface
Larisa V. Arapkina
;
Vladimir A. Yuryev
;
27 Jul 2009
14.
Peculiarities and evolution of Raman spectra of multilayer Ge/Si(001) heterostructures containing arrays of low-temperature MBE-grown Ge quantum dots of different size and number density: Experimental studies and numerical simulations
Mikhail S. Storozhevykh
;
Larisa V. Arapkina
;
Sergey M. Novikov
;
Valentyn S. Volkov
;
Aleksey V. Arsenin
;
Oleg V. Uvarov
;
Vladimir A. Yuryev
;
3 Apr 2021
15.
Metal silicide/poly-Si Schottky diodes for uncooled microbolometers
K. V. Chizh
;
V. A. Chapnin
;
V. P. Kalinushkin
;
V. Ya. Resnik
;
M. S. Storozhevykh
;
V. A. Yuryev
;
29 Jan 2013
16.
Application of elastic mid-IR-laser-light scattering for non-destructive inspection in microelectronics
V. P. Kalinushkin
;
V. A. Yuryev
;
O. V. Astafiev
;
A. N. Buzynin
;
N. I. Bletskan
;
7 Jun 2011
17.
Application of elastic mid-IR light scattering for inspection of internal gettering operations
O. V. Astafiev
;
A. N. Buzynin
;
V. P. Kalinushkin
;
V. A. Yuryev
;
6 Jun 2011
18.
An initial phase of Ge hut array formation at low temperature on Si(001)
Larisa V. Arapkina
;
Vladimir A. Yuryev
;
7 Feb 2011
19.
CMOS compatible dense arrays of Ge quantum dots on the Si(001) surface: Hut cluster nucleation, atomic structure, and array life cycle during UHV MBE growth
L. V. Arapkina
;
V. A. Yuryev
;
20 Sep 2010
20.
Phase transition between (2 x 1) and c(8 x 8) reconstructions observed on the Si(001) surface around 600C
L. V. Arapkina
;
V. A. Yuryev
;
V. M. Shevlyuga
;
K. V. Chizh
;
2 Jul 2010
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