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25 April 2024
 
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Results 1 to 20 of 24 for query "I.N.Yassievich". (0.01 sec.)

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1.
Tunneling ionization of deep centers in high frequency electric fields
S. D. Ganichev; I. N. Yassievich; W. Prettl;
22 Dec 2002   /  J. Phys.:Condens.Matter 14 (2002) R1263
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2.
Population Inversion Induced by Resonant States in Semiconductors
M.A.Odnoblyudov; I.N.Yassievich; M.S.Kagan; Yu.M.Galperin; X.H.Wang; K.A.Chao;
25 Nov 1998
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3.
Spin-dependent resonant tunneling in symmetrical double-barrier structure
M.M. Glazov; P.S. Alekseev; M.A. Odnoblyudov; V.M. Chistyakov; S.A. Tarasenko; I.N. Yassievich;
8 Oct 2004   /  Phys. Rev. B 71, 155313 (2005)
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4.
Spin injection and detection by resonant tunneling structure
M.M. Glazov; S.A. Tarasenko; P.S. Alekseev; M.A. Odnoblyudov; V.M. Chistyakov; I.N. Yassievich;
8 Jun 2004
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5.
Radiative states in type-II GaSb/GaAs quantum wells
N N Ledentsov; J Böhrer; M Beer; F Heinrichsdorff; M Grundmann; D Bimberg; S V Ivanov; B Y Meltser; S V Shaposhnikov; I N Yassievich; N N Faleev; P S Kop'ev; Z I Alferov;
15 Nov 1995   /  Phys Rev B, 52 (19), 14058-14066
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6.
Electron-phonon Interaction in Non-polar Quantum Dots Induced by the Amorphous Polar Environment
A.N. Poddubny; S. V. Goupalov; V.I. Kozub; I. N. Yassievich;
7 Aug 2008
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7.
Magnetic field effect on tunnel ionization of deep impurities by terahertz radiation
S.D.Ganichev; S.N.Danilov; M.Sollinger; J.Zimmermann; A.S.Moskalenko; V.I.Perel; I.N.Yassievich; C.Back; W.Prettl;
19 Aug 2003
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8.
Giant negative magnetoresistance in semiconductors doped by multiply charged deep impurities
S.D. Ganichev; H. Ketterl; W. Prettl; I.A. Merkulov; V.I. Perel; I.N. Yassievich; A.V. Malyshev;
23 Nov 2000
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9.
Magneto-optical properties in ultrathin InAs-GaAs quantum wells
P D Wang; N N Ledentsov; Sotomayor Torres CM; I N Yassievich; A Pakhomov; A Y Egovov; P S Kop'ev; V M Ustinov;
15 Jul 1994   /  Phys Rev B, 50 (3), 1604-1610
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10.
Energy transfer processes in Er-doped SiO2 sensitized with Si nanocrystals
I. Izeddin; D. Timmerman; T. Gregorkiewicz; A.S. Moskalenko; A.A. Prokofiev; I.N. Yassievich; M. Fujii;
5 Jun 2008
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11.
In-plane electric current is induced by tunneling of spin-polarized carriers
S A Tarasenko; V I Perel'; I N Yassievich;
30 Jul 2004   /  Phys Rev Lett, 93 (5), 056601
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12.
Nanosecond dynamics of the near-infrared photoluminescence of Er-doped SiO2 sensitized with Si nanocrystals
I Izeddin; A S Moskalenko; I N Yassievich; M Fujii; T Gregorkiewicz;
17 Nov 2006   /  Phys Rev Lett, 97 (20), 207401
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13.
Tunneling spin-galvanic effect
S.A. Tarasenko; V.I. Perel'; I.N. Yassievich;
6 Oct 2003   /  Revised, Phys. Rev. Lett. 93, 056601 (2004)
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14.
Spin-dependent tunnelling through a symmetric barrier
V.I. Perel'; S.A. Tarasenko; I.N. Yassievich; S.D. Ganichev; V.V. Bel'kov; W. Prettl;
8 Dec 2002   /  Phys. Rev. B 67, 201304(R) (2003)
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15.
Phonon decay in silicon nanocrystals
A. A. Prokofiev; A. N. Poddubny; I. N. Yassievich;
5 Apr 2013
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16.
Optical transitions and energy relaxation of hot carriers in Si nanocrystals
A.N. Poddubny; A.A. Prokofiev; I.N. Yassievich;
1 Oct 2010
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17.
Carrier relaxation in Si/SiO$_2$ quantum dots
A. A. Prokofiev; S. V. Goupalov; A. S. Moskalenko; A. N. Poddubny; I. N. Yassievich;
22 May 2008
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18.
Tight-binding calculations of SiGe alloy nanocrystals in SiO2 matrix
A. V. Belolipetsky; M. O. Nestoklon; I. N. Yassievich;
14 Jan 2019
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19.
Direct bandgap optical transitions in Si nanocrystals
A. A. Prokofiev; A. S. Moskalenko; I. N. Yassievich; W. D. A. M. de Boer; D. Timmerman; H. Zhang; W. J. Buma; T. Gregorkiewicz;
27 Jan 2009
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20.
Tunneling Ionization of Autolocalized DX- Centers in Terahertz Fields
S D Ganichev; I N Yassievich; W Prettl; J Diener; B K Meyer; K W Benz;
21 Aug 1995   /  Phys Rev Lett, 75 (8), 1590-1593
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