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19 April 2024
 
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Results 1 to 11 of 11 for query "N.V.Agrinskaya". (0.00 sec.)


1.
Magnetoresistance of p-GaAs/AlGaAs structures in the vicinity of metal-insulator transition: Effect of superconducting leads
N.V.Agrinskaya; V.I.Kozub; A.V.Chernyaev; D.V. Shamshur; A.A. Zuzin;
27 Oct 2004
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2.
Photoluminescence and transport in selectively doped p-GaAs/AlGaAs quantum wells: manifestation of the upper Hubbard band
N.V.Agrinskaya; Yu.L.Ivanov; P.V.Petrov; V.M.Ustinov;
25 Apr 2002
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3.
Metal-insulator transition in 2D: a role of the upper Habbard band
V.I.Kozub; N.V.Agrinskaya;
13 Apr 2001
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4.
Evidence of the virtual Anderson transition in a narrow impurity band of p-GaAs/AlGaAs quantum wells: $epsilon_4$ conductivity and electric breakdown at low temperature
N.V.Agrinskaya; V.I.Kozub; D.V.Shamshur;
5 Oct 2007
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5.
Slow relaxations of magnetoresistance in AlGaAs-GaAs quantum well structures quenched in a magnetic field
N. V.Agrinskaya; V. I. Kozub; D. V. Shamshur; A. V. Shumilin; Y. M. Galperin;
5 Mar 2010
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6.
Temperature-dependent disorder and magnetic field driven disorder: experimental observations for doped GaAs/AlGaAs quantum well structures
N.V. Agrinskaya; V.A. Berezovets; V.I. Kozub;
9 Dec 2015
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7.
Low temperature transport properties of multigraphene structures on 6H-SiC obtained by thermal graphitization: evidences of a presence of nearly perfect graphene layer
A.A.Lebedev; N.V.Agrinskaya; V.A.Beresovets; V.I.Kozub; S.P.Lebedev; A.A.Sitnikova;
18 Dec 2012
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8.
Slow relaxation of magnetoresistance in doped p -GaAs/AlGaAs layers with partially filled upper Hubbard band
N.V.Agrinskaya; V.I.Kozub; D.V.Shamshur; A.Shumilin;
30 Oct 2008
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9.
Electric bias-controlled switching of magnetization of ferrimagnetically coupled Mn delta-layers in a GaAs-AlGaAs quantum well
N. V. Agrinskaya; A. M. Kalashnikova; V. I. Kozub;
18 Jul 2019
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10.
Suppression of the virtual Anderson transition in a narrow impurity band of doped quantum well structures
N.V. Agrinskaya; V.I. Kozub; D.S. Poloskin;
31 Aug 2011
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11.
Comment on "Weak localization in GaMnAs: evidence of impurity band transport" by L. P. Rokhinson et. al. (Phys. Rev. B, 76, 161201 R; arXivCond-mat:0707.2416)
N.V. Agrinskaya; V.I. Kozub;
3 Dec 2009
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