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26 April 2024 |
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Article overview
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Driving-dependent damping of Rabi oscillations in two-level
semiconductor systems | | D. Mogilevtsev
; A. P. Nisovtsev
; S. Kilin
; S. B. Cavalcanti
; H. S. Brandi
; L. E. Oliveira
; | | Date: |
29 Jun 2007 | | Abstract: | We propose a mechanism to explain the nature of the damping of Rabi
oscillations with increasing driving-pulse area in localized semiconductor
systems, and have suggested a general approach which describes a coherently
driven two-level system interacting with a dephasing reservoir. Present
calculations show that the non-Markovian character of the reservoir leads to
the dependence of the dephasing rate on the driving-field intensity, as
observed experimentally. Moreover, we have shown that the damping of Rabi
oscillations might occur as a result of different dephasing mechanisms for both
stationary and non-stationary effects due to coupling to the environment.
Present calculated results are found in quite good agreement with available
experimental measurements. | | Source: | arXiv, arxiv.0706.4372 | | Services: | Forum | Review | PDF | Favorites | |
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