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26 April 2024 |
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Electron-ion recombination of Si IV forming Si III: Storage-ring measurement and multiconfiguration Dirac-Fock calculation | | E. W. Schmidt
; D. Bernhardt
; A. Mueller
; S. Schippers
; S. Fritzsche
; J. Hoffmann
; A. S. Jaroshevich
; C. Krantz
; M. Lestinsky
; D. A. Orlov
; A. Wolf
; D. Lukic
; D. W. Savin
; | | Date: |
10 Sep 2007 | | Abstract: | The electron-ion recombination rate coefficient for Si IV forming Si III was
measured at the heavy-ion storage-ring TSR. The experimental electron-ion
collision energy range of 0-186 eV encompassed the 2p(6) nl n’l’ dielectronic
recombination (DR) resonances associated with 3s to nl core excitations, 2s
2p(6) 3s nl n’l’ resonances associated with 2s to nl (n=3,4) core excitations,
and 2p(5) 3s nl n’l’ resonances associated with 2p to nl (n=3,...,infinity)
core excitations. The experimental DR results are compared with theoretical
calculations using the multiconfiguration Dirac-Fock (MCDF) method for DR via
the 3s to 3p n’l’ and 3s to 3d n’l’ (both n’=3,...,6) and 2p(5) 3s 3l n’l’
(n’=3,4) capture channels. Finally, the experimental and theoretical plasma DR
rate coefficients for Si IV forming Si III are derived and compared with
previously available results. | | Source: | arXiv, 0709.1363 | | Services: | Forum | Review | PDF | Favorites | |
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